FormFactor Beaverton Inc

Excellent Performance – Longest Lifetime

• Best price per contact – typically over one million (1,000,000) touchdowns
• RF/Microwave signal is shielded and completely air isolated in the probe body
• Excellent performance in vacuum environments and temperatures as low as 4 K, or as high as 300°C
• Highest impedance control with perfectly-symmetrical, MEMS-machined coplanar contact structure
• Probe on any pad material with minimal damage

• Highest accuracy in test results
• Easy setup even for less experienced users
• Minimized coupling losses with minimal trench dimensions
• Exclusive FormFactor-developed automated test methodology
• Wide range of tools for capturing, logging and interpreting data
• Enables hands-free autonomous calibration and re-calibration at multiple temperatures
• Search First Light feature enables automated determination of initial position for optimization
• Once aligned, all calibration functions are automated and performed through SiPh-Tool

• On-wafer power device characterization up to 10,000 V DC / 600 A
• Reduced probe and device destruction at high currents up to 20 A DC and 300 A pulse
• Prevent thin wafers from curling and breaking
• Accurate Rds(on) measurement at high current
• Accurate UIS measurements at high temperature
• Roll-out stage for full wafer access and easy wafer loading/unloading
• Seamless integration between Velox and analyzers/measurement software
• High-throughput wafer autoloading (standard, thinned, warped, TAIKO)
• Easy on-screen navigation, wafer mapping, and operation of accessories with Velox

Enabling single-contact high-current/high-voltage test

• Enables coaxial measurements up to 10,000 V and 300 A pulsed (600 A in a parallel configuration) with a single touchdown
• Even distribution of high current with innovative multi-fingertip design
• Compatible with Tesla 200/300 mm power device characterization system
• Reduced measurement time by testing both high-voltage and high-current conditions with a single touchdown
• Accurate characterization of a wide range of pad sizes and test currents, with minimum pad damage and contact resistance
• Safe, reliable and repeatable high-current/voltage measurements over a wide temperature range (from -55°C to +300°C)

Test power devices on wafer with high-performance and low-contact resistance on smaller pads

• Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
• Measure devices on wafer at high-current conditions over a wide temperature range (-55°C to 300°C)
• Small scrub minimizes damage on Al pad
• Small footprint – tip for small pad probing down to 1 mm x 1 mm pad