Products

POWER (Fundamental), Peak Pulse, @ Output: Nominal, 7,000 watts; Minimum, 5,700 watts. Updated to reflect the new 190-260VAC, Single Phase 50/60Hz, 5KVA Max Power Option

PHARMONIC DISTORTION: Minus 20 dBc maximum at 40 watts. PRIMARY POWER (selected automatically): 90-132, 180-264 VAC; 50/60 Hz, single phase; <1000 watts maximum 

POWER (Fundamental), Peak Pulse, @ Output: Nominal, 7,000 watts; Minimum, 5,700 watts. Newly reflect 190-260VAC, Single Phase 50/60Hz, 5KVA Max Power Option

POWER (Fundamental), Peak Pulse, @ Output: Nominal, 7,000 watts; Minimum, 5,700 watts. Updated to reflect the new 190-260VAC, Single Phase 50/60Hz, 5KVA Max Power Option

POWER (Fundamental), Peak Pulse, @ Output: Nominal,  10,000  watts; Minimum, , 7,400 watts. Updated to reflect the new 190-260VAC, Single Phase 50/60Hz, 5KVA Max Power Option

POWER (Fundamental), Peak Pulse, @ Output: Nominal,  10,000  watts; Minimum,  8300  watts. Updated to reflect the new 190-260VAC, Single Phase 50/60Hz, 5KVA Max Power Option

The Model AA1000 is a rack mount unit sup- plying DC power, communication and RF routing to either the AA18G26 or AA26G40 field generating systems. The unit is supplied with 2m and 4m power and RF cables, as well, as bulkhead feedthroughs for both cable types.

producing a field strength of 20V/m at 1 meter

• 3dB BEAMWIDTH :
  Plane: 17.5 degrees
  H Plane: 7.8 degrees
• SIZE (W x H x D):
  12.1cm x 18.4cm x 17.8cm
  (4.75in x 7.25in x 7in)
• 2 Watt CW
• 18—26.5 GHz
• 20 V/m & 50 V/m min field strength options @ 1 meter test distance
• CE, RoHS and WEEE compliant

producing a field strength of 50V/m at 1meter

• 3dB BEAMWIDTH :
  E Plane: 8.1 degrees
  H Plane: 9.5 degrees
• SIZE (W x H x D) :
  2.1cm x 18.4cm x 35.6cm
  (4.75in x 7.25in x 14in)
• 2 Watt CW
• 18—26.5 GHz
• 20 V/m & 50 V/m min field strength options @ 1 meter test distance
• CE, RoHS and WEEE compliant

• 3dB BEAMWIDTH :
  E Plane: 16.7 degrees

  H Plane: 18.3 degrees
• SIZE (W x H x D) :
  2.1cm x 18.4cm x 15.2cm

  (4.75in x 7.25in x 6in)
• 1 Watt CW
• 26.5—40 GHz
• 20 V/m & 50 V/m min field strength options @ 1 meter test distance
• CE, RoHS and WEEE complian

• 3dB BEAMWIDTH :
  Plane: 8.1 degrees

  H Plane: 9.7 degrees
• SIZE (W x H x D) :
  2.1cm x 18.4cm x 25.4cm

  (4.75in x 7.25in x 10in)
• 1 Watt CW
• 26.5—40 GHz
• 20 V/m & 50 V/m min field strength options @ 1 meter test distance
• CE, RoHS and WEEE complian

• Proven member of a modular Power Module family, more than 800 units are in service
• Precision-regulated Bi-Polar output provides up to +12 to -12 Amps for Magnet loads.
• Smooth operation through zero amps output current, no “Crossover” problems.
• All 2510 MCOR12 Power Modules are identical and interchangeable.
• Has two high-precision measurements of output current;
  • one is used to close the regulation control loop,
  • provides an independent monitoring signal to the Crate Interface Card.
• Fault sensing circuitry in the module sets a Fault Latch which inhibits the output.
• A (momentary) Sync input signal inhibits MOSFET switching when it is active (high);
  • this eliminate switching noise .
  • reduces power line noise during sensitive analog signal measurements.

• Proven member of a modular Power Module family, more than 800 units are in service
• Precision-regulated Bi-Polar output provides up to +30 to -30 Amps for Magnet loads.
• Smooth operation through zero amps output current, no “Crossover” problems.
• All 2510R30 MCOR30 Power Modules are identical and interchangeable
  • Programming Card is plugged into the replacement module.
• Each channel has a critically-damped, LC noise filter with a cut-off frequency of about 8 kHz.
• A 16-pin front panel diagnostics connector taps onto major circuit nodes which enables quick “inthe-crate” fault evaluation

• On-wafer power device characterization up to 10,000 V DC / 600 A
• Reduced probe and device destruction at high currents up to 20 A DC and 300 A pulse
• Prevent thin wafers from curling and breaking
• Accurate Rds(on) measurement at high current
• Accurate UIS measurements at high temperature
• Roll-out stage for full wafer access and easy wafer loading/unloading
• Seamless integration between Velox and analyzers/measurement software
• High-throughput wafer autoloading (standard, thinned, warped, TAIKO)
• Easy on-screen navigation, wafer mapping, and operation of accessories with Velox

Enabling single-contact high-current/high-voltage test

• Enables coaxial measurements up to 10,000 V and 300 A pulsed (600 A in a parallel configuration) with a single touchdown
• Even distribution of high current with innovative multi-fingertip design
• Compatible with Tesla 200/300 mm power device characterization system
• Reduced measurement time by testing both high-voltage and high-current conditions with a single touchdown
• Accurate characterization of a wide range of pad sizes and test currents, with minimum pad damage and contact resistance
• Safe, reliable and repeatable high-current/voltage measurements over a wide temperature range (from -55°C to +300°C)