Products

Broadband RF Amplifiers from Exodus Advanced Communications deliver powerful and reliable signal amplification across a wide frequency spectrum. Designed for demanding RF environments, these solid state power amplifiers provide excellent gain stability, wide bandwidth coverage, and scalable output power. With support for advanced semiconductor technologies and flexible system formats, these broadband RF amplifiers are ideal for defense electronics, RF communications, radar systems, and EMC testing platforms.

Key Features

• Wide frequency coverage from 1 MHz to 18 GHz
• Solid state power amplifier architecture for reliable RF performance
• Output power scalable up to 300 W for modules and 1300 W for systems
• Advanced semiconductor technologies including LDMOS, GaN, and GaAsFET
• Continuous wave and linearized amplifier designs for signal accuracy
• High gain stability for consistent RF signal amplification
• Octave and decade bandwidth capability for flexible RF applications
• Rugged components designed for demanding environments
• Available in benchtop, rackmount, and modular configurations
• Suitable for radar systems, RF immunity testing, and communication platforms

Exodus Low Frequency AMPs – 10 kHz to 4.2 GHz

• High-performance low-frequency amplifiers for RF, defense, and EMC testing
• Coverage: 10 kHz to 4.2 GHz, multiple models available
• Output power scalable from 25 W up to 2 kW per module
• Rugged LDMOS, GaN, and GaAsFET architectures for reliable operation
• CW and linearized solid-state designs for precision signal amplification
• Modular and turnkey system options up to 50 kW
• Optimized for radar, RF immunity, and high-power signal transmission

Low Noise Amplifiers from Exodus Advanced Communications are engineered to deliver exceptional signal clarity and sensitivity across a wide frequency range. Designed for high-performance RF applications, these amplifiers provide ultra low noise figures, high gain, and reliable operation in demanding environments. With coverage from 10 kHz to 50 GHz, Low Noise Amplifiers are ideal for aerospace, defense, telecommunications, and scientific research systems.

Key Features

• Ultra wide frequency coverage from 10 kHz to 50 GHz
• Extremely low noise figure for high sensitivity applications
• High gain performance up to 60 dB
• Output power up to 2 W depending on model
• Advanced RF design for superior signal fidelity
• Available in hermetically sealed and rugged configurations
• Suitable for benchtop, laboratory, and field deployment
• Stable performance across varying environmental conditions
• Designed for satellite communication, radar, and RF testing
• Compact and reliable design for easy integration

Exodus Millimeter AMPs – 18 GHz to 50 GHz

• High-performance millimeter-wave solid-state power amplifiers (SSPAs)
• Frequency range: 18 GHz to 50 GHz for high-frequency RF applications
• Output power scalable from 5 W to 1 kW for modules and systems
• CW and linearized designs for precision signal amplification
• Built with GaN, GaAsFET, chip-and-wire hybrid, and waveguide technologies
• Suitable for radar, EW, RF communications, and EMC testing
• Modular, benchtop, and rackmount formats for flexible deployment

Pulse RF Amplifiers from Exodus Advanced Communications are engineered to deliver high peak power and precision performance across a wide frequency range. Designed for pulse-based RF applications, these solid state power amplifiers provide reliable signal amplification with excellent gain stability and fast response. Built using advanced semiconductor technologies, Pulse RF Amplifiers support demanding applications such as radar systems, RF immunity testing, and high power pulse transmission.

Key Features

• Wide frequency range from 1 MHz to 18 GHz
• High peak output power up to 20 kW for system configurations
• Solid state pulse amplifier design for reliable RF performance
• Advanced technologies including LDMOS, GaN, and GaAsFET
• High gain performance up to 69 dB
• Fast response for pulse signal applications
• CW and pulse optimized designs for accurate signal control
• Rugged construction for demanding RF environments
• Available in benchtop, rackmount, and modular formats
• Ideal for radar, HIRF testing, and RF communication systems

Exodus Ultra High Frequency AMPs – 80 MHz to 26.5 GHz

• High-performance ultra-high frequency solid-state power amplifiers (SSPAs)
• Frequency coverage: 80 MHz to 26.5 GHz, ideal for broad RF applications
• Output power scalable from 10 W to over 1000 W per module
• Built with LDMOS, GaN, GaAsFET, hybrid, and waveguide technologies
• CW and linearized designs for precision signal amplification
• Modular, rackmount, and benchtop systems up to 4000 W
• Applications include radar, RF communications, EMC testing, and defense electronics

• HD4096 technology provides 12-bit resolution up to 8 GHz and 20 GS/s
• Up to 5 Gpts of acquisition memory enables detailed viewing of long events
• 15.6” 1900 x 1080 Full HD capacitive touchscreen
• ProBus2 input supports up to 8 GHz bandwidth while maintaining support for legacy ProBus probes
• MAUI with OneTouch user interface for intuitive and efficient operation
• Waveform Control Knobs – Control channel, zoom, math and memory traces with the multiplexed vertical and horizontal knobs
• Color-coded panel indicators – Trigger, horizontal and vertical indicator colors correspond to the associated waveform on the display
• Cursor/Adjust Knobs – Enable and position cursors or adjust settings and parameters without opening a menu
• Mixed Signal Capability – Debug complex embedded designs with integrated 16-channel mixed signal capability
• Easy connectivity with seven USB 3.1 ports (3 front, 4 side) and UHD (4k) HDMI and DisplayPort outputs

• Eye diagram (a), eye mask failure (b) and IsoBER eye opening analysis (c)
• Jitter spectrum (a) with noise floor display (b) and inverse FFT of the periodic jitter (c)
• Data dependent jitter (DDj) plot for each bit in synch with pattern (a) and with histogram (b)
• Time interval error (TIE) jitter track analysis
• Jitter histograms (a) with bathtub curves (b) and CDF plot (c)
• Intersymbol interference (ISI) plots pinpoint bit sequences that have high ISI and are sources of bit errors
• Jitter measurements table with full details for one or more “lanes” plus reference

• S-parameters DC to 40 GHz, single-ended and mixed-mode
• Impedance Profile with <1 mm resolution, differential and common-mode
• Internal, automatic OSLT calibration
• USB-connected, small, lightweight
• Flexible display of the measurements
• Remove effects from fixtures, connectors and cables
• Emulate eye diagrams with CTLE, DFE and FFE equalization
• Advanced jitter analysis