Products

• On-wafer power device characterization up to 10,000 V DC / 600 A
• Reduced probe and device destruction at high currents up to 20 A DC and 300 A pulse
• Prevent thin wafers from curling and breaking
• Accurate Rds(on) measurement at high current
• Accurate UIS measurements at high temperature
• Roll-out stage for full wafer access and easy wafer loading/unloading
• Seamless integration between Velox and analyzers/measurement software
• High-throughput wafer autoloading (standard, thinned, warped, TAIKO)
• Easy on-screen navigation, wafer mapping, and operation of accessories with Velox

Enabling single-contact high-current/high-voltage test

• Enables coaxial measurements up to 10,000 V and 300 A pulsed (600 A in a parallel configuration) with a single touchdown
• Even distribution of high current with innovative multi-fingertip design
• Compatible with Tesla 200/300 mm power device characterization system
• Reduced measurement time by testing both high-voltage and high-current conditions with a single touchdown
• Accurate characterization of a wide range of pad sizes and test currents, with minimum pad damage and contact resistance
• Safe, reliable and repeatable high-current/voltage measurements over a wide temperature range (from -55°C to +300°C)