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DC Power

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  • Accurate and precise measurement of device parameters up to 3,000 V

    • Coaxial and triaxial measurements up to 3,000 V
    • High-quality construction with low-noise electrical performance
    • Replaceable probe tips in a variety of tip sizes
    • Temperature range of -55 to 300ºC
    • Triaxial measurement ensures a much better understanding of device leakage in the off state
    • Highly reliable, stable and repeatable measurements
    • Integrally designed as part of a complete measurement solution


  • Enabling single-contact high-current/high-voltage test

    • Enables coaxial measurements up to 10,000 V and 300 A pulsed (600 A in a parallel configuration) with a single touchdown
    • Even distribution of high current with innovative multi-fingertip design
    • Compatible with Tesla 200/300 mm power device characterization system
    • Reduced measurement time by testing both high-voltage and high-current conditions with a single touchdown
    • Accurate characterization of a wide range of pad sizes and test currents, with minimum pad damage and contact resistance
    • Safe, reliable and repeatable high-current/voltage measurements over a wide temperature range (from -55°C to +300°C)


  • Test power devices on wafer with high-performance and low-contact resistance on smaller pads

    • Minimal contact resistance at the pad-tip junction to reduce heating during measurements, with fewer probe marks
    • Measure devices on wafer at high-current conditions over a wide temperature range (-55°C to 300°C)
    • Small scrub minimizes damage on Al pad
    • Small footprint – tip for small pad probing down to 1 mm x 1 mm pad



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